Plasma-Enhanced Chemical Vapor Deposition (PECVD)

Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a thin-film deposition technique used to grow thin films on substrates. In PECVD, a low-pressure plasma is created by applying electrical energy to a precursor gas mixture. The plasma energizes the gas, leading to the formation of reactive species such as ions, radicals, and excited molecules. These species facilitate chemical reactions, allowing the deposition of thin films onto the substrate's surface. PECVD offers several advantages, including low processing temperatures, excellent film conformality, and the ability to deposit a wide range of materials, making it a versatile method widely used in semiconductor manufacturing, optical coatings, and other thin-film-based applications.

 

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